M. Ozeki

New approach to the atomic layer epitaxy of GaAs using a fast gas stream

M. Ozeki, K. Mochizuki, N. Ohtsuka et al. · Applied Physics Letters · 1988 · 122 citations

Semiconductors, Materials Science, Electrical Engineering +15

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy

K. Kodama, M. Ozeki, K. Mochizuki et al. · Applied Physics Letters · 1989 · 57 citations

Semiconductors, Materials Science, Situ Investigation +12

Carbon incorporation in GaAs layer grown by atomic layer epitaxy

K. Mochizuki, M. Ozeki, K. Kodama et al. · Journal of Crystal Growth · 1988 · 42 citations

Electrical Engineering, Engineering, Applied Physics +4

Pulsed jet epitaxy of III–V compounds

M. Ozeki, N. Ohtsuka, Yoshiki Sakuma et al. · Journal of Crystal Growth · 1991 · 38 citations

Materials Engineering, Electrical Engineering, Epitaxial Growth +5

Kinetic processes in atomic-layer epitaxy of GaAs and AlAs using a pulsed vapor-phase method

M. Ozeki, K. Mochizuki, N. Ohtsuka et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 33 citations

Semiconductors, Materials Science, Electrical Engineering +15