New approach to the atomic layer epitaxy of GaAs using a fast gas stream

M. Ozeki, K. Mochizuki, N. Ohtsuka, +1

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringNew Growth MethodEngineering +13

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy

K. Kodama, M. Ozeki, K. Mochizuki, +1

Applied Physics Letters

SemiconductorsMaterials ScienceSitu InvestigationEngineeringPhysics +10

Carbon incorporation in GaAs layer grown by atomic layer epitaxy

K. Mochizuki, M. Ozeki, K. Kodama, +1

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsCarbon IncorporationMolecular Beam Epitaxy +2

Pulsed jet epitaxy of III–V compounds

M. Ozeki, N. Ohtsuka, Yoshiki Sakuma, +1

Journal of Crystal Growth

Materials EngineeringElectrical EngineeringEpitaxial GrowthEngineeringApplied Physics +3

Kinetic processes in atomic-layer epitaxy of GaAs and AlAs using a pulsed vapor-phase method

M. Ozeki, K. Mochizuki, N. Ohtsuka, +1

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

SemiconductorsMaterials ScienceElectrical EngineeringMaterials EngineeringAtomic-layer Epitaxy +13

Atomic layer epitaxy of GaP and elucidation for self-limiting mechanism

Yoshiki Sakuma, K. Kodama, M. Ozeki

Applied Physics Letters

EngineeringAtomic Layer EpitaxyChemistryChemical DepositionChemical Engineering +19

Initial stages of GaAs and AlAs growth on Si substrates: Atomic-layer epitaxy

Kuninori Kitahara, N. Ohtsuka, M. Ozeki

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

EngineeringSemiconductor NanostructuresSemiconductorsAlas GrowthAtomic-layer Epitaxy +14

Two-dimensional electron gas in a selectively doped InP/In0.53 Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy

M. Takikawa, J. Komeno, M. Ozeki

Applied Physics Letters

Two-dimensional Electron GasEnhanced Electron MobilitiesElectrical EngineeringWide-bandgap SemiconductorEngineering +10

Growth of GaAs and AlAs thin films by a new atomic layer epitaxy technique

M. Ozeki, K. Mochizuki, N. Ohtsuka, +1

Thin Solid Films

Materials ScienceEpitaxial GrowthEngineeringApplied PhysicsSemiconductor Material +5

Comparative study of self-limiting growth of GaAs using different Ga-alkyl compounds: (CH3)3Ga, C2H5(CH3)2Ga, and (C2H5)3Ga

Yoshiki Sakuma, M. Ozeki, N. Ohtsuka, +1

Journal of Applied Physics

Self-limiting GrowthEngineeringCrystal Growth TechnologyChemistryMethyl Groups +15