Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Abstract

We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p-type contact layers. The one-dimensional (1D) nanopatterns (250nm in width and 100nm in depth) are defined using a TiO2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p-contact layers, the output power of LEDs is improved by 40 and 63% at 20mA as compared to those fabricated with the unpatterned CIO/ITO and conventional Ni∕Au contacts, respectively.

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