Applied Physics Letters · 2006 · 52 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor SurfacesGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesIndium Tin Oxide Thin FilmsLight-emitting DevicesNanostructured Optoelectronic MaterialsPower OutputSurface ReliefUltraviolet Light-emitting Diodes
We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p-type contact layers. The one-dimensional (1D) nanopatterns (250nm in width and 100nm in depth) are defined using a TiO2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p-contact layers, the output power of LEDs is improved by 40 and 63% at 20mA as compared to those fabricated with the unpatterned CIO/ITO and conventional Ni∕Au contacts, respectively.
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High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations