Applied Physics Letters · 2005 · 74 citations · 12 references
EngineeringMaterials SciencePhysicsElectronic MaterialsOptoelectronicsSemiconductor DevicesCathode MaterialsIii-v SemiconductorsLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor LasersCathode Crystal StructureCathode ProcessesCurrent Injection EfficiencyGallium Nitride Light-emitting DiodesSemiconductor Laser DiodesVertical Light-emitting Diodes
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation D. W. Kim, H. Y. Lee, M. C. Yoo, G. Y. Yeom; Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure. Appl. Phys. Lett. 31 January 2005; 86 (5): 052108. https://doi.org/10.1063/1.1861497 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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Electrical effects of plasma damage in p-GaN
X. A. Cao, S. J. Pearton, A. P. Zhang et al. · Applied Physics Letters · 1999 · 203 citations