M. C. Yoo

Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure

D. W. Kim, Hyoyoung Lee, M. C. Yoo et al. · Applied Physics Letters · 2005 · 74 citations

Engineering, Materials Science, Physics +15

Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas

Y. H. Lee, H. S. Kim, G.Y. Yeom et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Low-resistant and high-transparent Ru/Ni ohmic contact on <i>p</i>-type GaN

Ho Won Jang, W. Urbanek, M. C. Yoo et al. · Applied Physics Letters · 2002 · 34 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon

Zhijun Luo, Y. Cho, Vorrada Loryuenyong et al. · IEEE Photonics Technology Letters · 2002 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes

H.C. Lee, J.B. Park, J.W. Bae et al. · Solid-State Electronics · 2008 · 28 citations

Engineering, Electrical Engineering, Materials Science +13