Yu-Mei Fan

Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

Shyi‐Ming Pan, R. C. Tu, Yu-Mei Fan et al. · IEEE Photonics Technology Letters · 2003 · 84 citations

Optical Materials, Engineering, Ingan-gan Light-emitting Diodes +16

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

L. C. Le, D. G. Zhao, Desheng Jiang et al. · Applied Physics Letters · 2012 · 62 citations

Wide-bandgap Semiconductor, Engineering, Quantum Well +18

Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts

Shyi‐Ming Pan, R. C. Tu, Yu-Mei Fan et al. · IEEE Photonics Technology Letters · 2003 · 43 citations

Electrical Engineering, Electronic Devices, Engineering +15

Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an <i>in situ</i> rough SiNx interlayer in <i>n</i>-GaN layers

R. C. Tu, Chang‐Cheng Chuo, Shyi‐Ming Pan et al. · Applied Physics Letters · 2003 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +15