L. C. Le

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

L. C. Le, D. G. Zhao, Desheng Jiang et al. · Applied Physics Letters · 2012 · 62 citations

Wide-bandgap Semiconductor, Engineering, Quantum Well +18

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

Jing Yang, Degang Zhao, Desheng Jiang et al. · Journal of Applied Physics · 2014 · 48 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +13

GaN high electron mobility transistors with AlInN back barriers

Xin He, Desheng Zhao, Desheng Jiang et al. · Journal of Alloys and Compounds · 2015 · 34 citations

Electrical Engineering, Engineering, Nanoelectronics +3

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

Jing Yang, Degang Zhao, Desheng Jiang et al. · Journal of Applied Physics · 2015 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Structural Characteristics +13

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes

L. C. Le, Desheng Zhao, Desheng Jiang et al. · Optics Express · 2014 · 32 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +12