D. G. Zhao

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

L. C. Le, D. G. Zhao, Desheng Jiang et al. · Applied Physics Letters · 2012 · 62 citations

Wide-bandgap Semiconductor, Engineering, Quantum Well +18

The investigation on carrier distribution in InGaN/GaN multiple quantum well layers

Jinlong Zhu, S. M. Zhang, H. Wang et al. · Journal of Applied Physics · 2011 · 25 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

L. C. Le, D. G. Zhao, Desheng Jiang et al. · Journal of Applied Physics · 2013 · 23 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +15

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au∕GaN Schottky contacts

Rihua Wang, Shijie Xu, S. L. Shi et al. · Applied Physics Letters · 2006 · 22 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Deep Level Centers +13

Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal–organic chemical vapour deposition

X L Wang, D. G. Zhao, Desheng Jiang et al. · Journal of Physics Condensed Matter · 2007 · 17 citations

Materials Science, Materials Engineering, Cross-sectional Cl +15