Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100)

Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

Y. W. Mo, D. E. Savage, B. S. Swartzentruber et al. · Physical Review Letters · 1990 · 1.4K citations

Engineering, Crystal Growth Technology, Silicon On Insulator +18

Surfactants in epitaxial growth

M. Copel, M. C. Reuter, Efthimios Kaxiras et al. · Physical Review Letters · 1989 · 1.1K citations

Materials Science, Epitaxial Growth, Engineering +12

Crystal Interfaces. Part I. Semi-Infinite Crystals

J. H. van der Merwe · Journal of Applied Physics · 1963 · 660 citations

Dislocation Spacing, Multiscale Mechanics, Engineering +23

Influence of surfactants in Ge and Si epitaxy on Si(001)

M. Copel, M. C. Reuter, M. Horn von Hoegen et al. · Physical review. B, Condensed matter · 1990 · 344 citations

Materials Engineering, Materials Science, Engineering +12

Symmetric arsenic dimers on the Si(100) surface

R. I. G. Uhrberg, R. D. Bringans, R. Z. Bachrach et al. · Physical Review Letters · 1986 · 225 citations

Materials Science, Surface Characterization, Engineering +11