Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

Wei Guo, Meng Zhang, Animesh Banerjee et al. · Nano Letters · 2010 · 475 citations

Natural Sciences, Materials Engineering, Materials Science +17

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 418 citations

Natural Sciences, Materials Science, Physics +17

InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

Akihiko Kikuchi, Mizue Kawai, M. di Tada et al. · Japanese Journal of Applied Physics · 2004 · 379 citations

Engineering, Electrical Engineering, Materials Science +13

Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

Raffaella Calarco, R. Meijers, Ratan Debnath et al. · Nano Letters · 2007 · 279 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer, Tamara Ebner, K. Thonke et al. · Physical review. B, Condensed matter · 1999 · 228 citations

Natural Sciences, Materials Engineering, Materials Science +17