Defect structure of a free standing GaN wafer grown by the ammonothermal method

<i>Fityk</i> : a general-purpose peak fitting program

Marcin Wojdyr · Journal of Applied Crystallography · 2010 · 2.7K citations

Natural Sciences, Materials Science, Computational Materials Science +13

Excellent crystallinity of truly bulk ammonothermal GaN

R. Doradziński, J. Garczyński, L. Sierzputowski et al. · Journal of Crystal Growth · 2008 · 320 citations

Natural Sciences, Materials Science, Physics +12

Use of synchrotron radiation in X-ray diffraction topography

K. Naukkarinen, P. Rabe · physica status solidi (a) · 1974 · 239 citations

Natural Sciences, Materials Science, Physics +16

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

Anurag Tyagi, Feng Wu, Erin C. Young et al. · Applied Physics Letters · 2009 · 101 citations

Engineering, Materials Engineering, Materials Science +17

Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image

Xianrong Huang, Michael Dudley, William M. Vetter et al. · Journal of Applied Crystallography · 1999 · 91 citations

Natural Sciences, Materials Engineering, Materials Science +17