T. Tuomi

Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

Marja‐Riitta Taskinen, M. Sopanen, Harri Lipsanen et al. · Surface Science · 1997 · 65 citations

Ii-vi Semiconductor, Engineering, Self-organized Inas Islands +8

Doping-induced strain in N-doped 4H–SiC crystals

H. Jacobson, Jens Birch, C. Hallin et al. · Applied Physics Letters · 2003 · 57 citations

Materials Science, Semiconductors, Doping-induced Strain +12

Photoluminescence of Cd1—xZnxTe Crystals Grown by High-Pressure Bridgman Technique

K. Hjelt, Minna Juvonen, T. Tuomi et al. · physica status solidi (a) · 1997 · 51 citations

X-ray diffraction study of thin electroluminescent ZnS films grown by atomic layer epitaxy

V.-P. Tanninen, M. Oikkonen, T. Tuomi · physica status solidi (a) · 1981 · 47 citations

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

Sakari Sintonen, M. Rudziński, Sami Suihkonen et al. · Journal of Applied Physics · 2014 · 44 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Engineering +12