M. Oikkonen

X-ray diffraction study of thin electroluminescent ZnS films grown by atomic layer epitaxy

V.-P. Tanninen, M. Oikkonen, T. Tuomi · physica status solidi (a) · 1981 · 47 citations

X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy

M. Oikkonen, M. Blomberg, T. Tuomi et al. · Thin Solid Films · 1985 · 29 citations

Materials Science, Ii-vi Semiconductor, Epitaxial Growth +10

Comparative study of the crystal phase, crystallite size and microstrain in electroluminescent ZnS:Mn films grown by atomic layer epitaxy and electron beam evaporation

V.-P. Tanninen, M. Oikkonen, T. Tuomi · Thin Solid Films · 1983 · 28 citations

Materials Science, Ii-vi Semiconductor, Material Analysis +11

Ellipsometric studies on zinc sulfide thin films grown by atomic layer epitaxy

M. Oikkonen · Journal of Applied Physics · 1987 · 22 citations

Thin Film Physics, Optical Materials, Engineering +20

Comparison of ZnS thin films grown by atomic layer epitaxy from zinc acetate and zinc chloride: An X-ray diffraction and spectroscopic ellipsometric study

M. Oikkonen, Markku Tammenmaa, Milja Asplund · Materials Research Bulletin · 1988 · 17 citations

Materials Science, Ii-vi Semiconductor, Epitaxial Growth +10