V.-P. Tanninen

X-ray diffraction study of thin electroluminescent ZnS films grown by atomic layer epitaxy

V.-P. Tanninen, M. Oikkonen, T. Tuomi · physica status solidi (a) · 1981 · 47 citations

How the ZnS:Mn layer thickness contributes to the performance of AC thin-film EL devices grown by atomic layer epitaxy (ALE)

R. Törnqvist, J. Antson, Jarmo Skarp et al. · IEEE Transactions on Electron Devices · 1983 · 34 citations

Materials Science, Electrical Engineering, Photoluminescence +15

Zero-phonon lines in electroluminescence and photoluminescence of ZnS:Mn thin films grown by atomic layer epitaxy

W. Busse, H.‐E. Gumlich, R. Törnqvist et al. · physica status solidi (a) · 1983 · 31 citations

Materials Science, Mn Thin Films, Ii-vi Semiconductor +15

Comparative study of the crystal phase, crystallite size and microstrain in electroluminescent ZnS:Mn films grown by atomic layer epitaxy and electron beam evaporation

V.-P. Tanninen, M. Oikkonen, T. Tuomi · Thin Solid Films · 1983 · 28 citations

Materials Science, Ii-vi Semiconductor, Material Analysis +11

Structural characterization of thin ZnS films by X-ray diffraction

V.-P. Tanninen, T. Tuomi · Thin Solid Films · 1982 · 14 citations

Materials Science, Engineering, X-ray Diffraction +4