Edward Letts - Concepedia

Author

Edward Letts

SixPoint Materials (United States)ORCID

Also Known As

E. Letts, Edward Letts, Edward R. Letts, Letts, Edward

Publications

318

Citations

H-Index

Concepts

All Affiliations

SixPoint Materials (United States)University of California, Santa Barbara

About

Edward Letts is an author at SixPoint Materials (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	245
2	Applied Physics	9	9	218
3	Chemistry	2	2	99
4	Natural Sciences	1	1	74
5	Chemical Engineering	1	1	27

Edward Letts

Publications

267

Citations

H-Index

Page 1

	Year	Citations
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Akira Uedono, Shoji Ishibashi, S. Keller, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringPositron Annihilation SpectroscopyAnnihilation Radiation	2009	74
Phase selection of microcrystalline GaN synthesized in supercritical ammonia Tadao Hashimoto, Kenji Fujito, Rajat Sharma, Journal of Crystal Growth Materials ScienceChemical EngineeringEngineeringGan Power DevicePhase Selection	2006	27
Improvement of crystal quality in ammonothermal growth of bulk GaN Tadao Hashimoto, Edward Letts, Masanori Ikari, Journal of Crystal Growth Materials ScienceEngineeringCrystal Growth TechnologyApplied PhysicsGan Power Device	2010	25
Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method Tadao Hashimoto, Edward Letts, Daryl Key, Japanese Journal of Applied Physics Materials ScienceElectron DensityElectrical EngineeringInch Gallium NitrideEngineering	2019	24
Development of GaN wafers via the ammonothermal method Edward Letts, Tadao Hashimoto, Sierra Hoff, Journal of Crystal Growth Electrical EngineeringEngineeringGan WafersApplied PhysicsAluminum Gallium Nitride	2014	20
Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices Tadao Hashimoto, Edward Letts, Daryl Key Crystals Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOxygen ConcentrationGan Substrates	2022	17
Reduction of crack density in ammonothermal bulk GaN growth Edward Letts, Daryl Key, Tadao Hashimoto Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrack DensityApplied Physics	2016	16
Development of GaN wafers for solid-state lighting via the ammonothermal method Edward Letts, Tadao Hashimoto, Masanori Ikari, Journal of Crystal Growth Electrical EngineeringSolid-state LightingEngineeringGan WafersOptical Properties	2011	15
7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Talesara, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower DeviceApplied Physics	2023	14
Defect structure of a free standing GaN wafer grown by the ammonothermal method Sakari Sintonen, Sami Suihkonen, Henri Jussila, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorSemiconductor TechnologyEngineeringApplied Physics	2014	13

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