Development of GaN wafers via the ammonothermal method

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Bulk GaN crystals grown by HVPE

Kenji Fujito, Shuichi Kubo, Hirobumi Nagaoka et al. · Journal of Crystal Growth · 2009 · 356 citations

Engineering, Materials Engineering, Materials Science +12

Excellent crystallinity of truly bulk ammonothermal GaN

R. Doradziński, J. Garczyński, L. Sierzputowski et al. · Journal of Crystal Growth · 2008 · 320 citations

Natural Sciences, Materials Science, Physics +12

Growth of gallium nitride by hydride vapor-phase epitaxy

R. J. Molnar, Werner Götz, Lucia Romano et al. · Journal of Crystal Growth · 1997 · 232 citations

Engineering, Materials Engineering, Materials Science +13

Morphology and characterization of GaN single crystals grown in a Na flux

Hisanori Yamane, Masahiko Shimada, Takashi Sekiguchi et al. · Journal of Crystal Growth · 1998 · 131 citations · Full text

Engineering, Materials Engineering, Materials Science +16