Daryl Key

Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method

Tadao Hashimoto, Edward Letts, Daryl Key et al. · Japanese Journal of Applied Physics · 2019 · 24 citations

Materials Science, Electron Density, Electrical Engineering +15

Development of GaN wafers via the ammonothermal method

Edward Letts, Tadao Hashimoto, Sierra Hoff et al. · Journal of Crystal Growth · 2014 · 20 citations

Electrical Engineering, Engineering, Gan Wafers +5

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

Tadao Hashimoto, Edward Letts, Daryl Key · Crystals · 2022 · 17 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Reduction of crack density in ammonothermal bulk GaN growth

Edward Letts, Daryl Key, Tadao Hashimoto · Journal of Crystal Growth · 2016 · 16 citations · Full text

Materials Science, Materials Engineering, Engineering +5

7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management

Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Talesara et al. · Applied Physics Letters · 2023 · 14 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13