Laterally overgrown structures as substrates for lattice mismatched epitaxy

Gallium arsenide and other compound semiconductors on silicon

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Engineering, Materials Engineering, Materials Science +17

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

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InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

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Engineering, Electrical Engineering, Materials Science +17

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 413 citations

Engineering, Materials Engineering, Materials Science +17

Electrical characterization of GaN p-n junctions with and without threading dislocations

P. Kozodoy, J. P. Ibbetson, H. Marchand et al. · Applied Physics Letters · 1998 · 357 citations · Full text

Engineering, Materials Engineering, Materials Science +17