Ultra-thin silicon-oxide films by sputter-deposition and their application to high-quality poly-Si TFTS

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

S.D.S. Malhi, H. Shichijo, S. Banerjee et al. · IEEE Transactions on Electron Devices · 1985 · 190 citations

Engineering, Computer Engineering, Electrical Engineering +17

Electrical conduction mechanism and breakdown property in sputter-deposited silicon dioxide films on polycrystalline silicon

Shiro Suyama, Akio Okamoto, T. Serikawa · Journal of Applied Physics · 1989 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

Transport Properties in Band-Tails of High Mobility Poly-Si TFTs

Tadashi Serikawa, Seiiti Shirai, Kazuo Nakagawa et al. · Japanese Journal of Applied Physics · 1996 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

Deposition Characteristics and Properties of SiO₂ Films Prepared by Reactive Sputtering in Hydrogen-, Oxygen- and Nitrogen-Argon Mixtures

Tadashi Serikawa, Seiiti Shirai · Japanese Journal of Applied Physics · 1994 · 11 citations

Engineering, Materials Engineering, Materials Science +17

High-Quality Gate-Oxide Films for Low-Temperature Fabricated Poly-Si TFTs

Shiro Suyama, Akio Okamoto, Seiiti Shirai et al. · MRS Proceedings · 1989 · 10 citations

Engineering, Materials Engineering, Materials Science +14