High-Quality Gate-Oxide Films for Low-Temperature Fabricated Poly-Si TFTs

The physics of semiconductor devices

H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations

Engineering, Materials Science, Physics +12

Effects of grain boundaries on the channel conductance of SOl MOSFET's

J.G. Fossum, A. Ortíz-Conde · IEEE Transactions on Electron Devices · 1983 · 122 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical conduction and breakdown in oxides of polycrystalline silicon and their correlation with interface texture

Peter Heimann, S. P. Murarka, T. T. Sheng · Journal of Applied Physics · 1982 · 66 citations

Engineering, Materials Engineering, Materials Science +17

Electrical characteristics of MOSFET's utilizing Oxygen—Argon sputter-deposited gate Oxide films

Shiro Suyama, Akio Okamoto, T. Serikawa · IEEE Transactions on Electron Devices · 1987 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Lowering of the breakdown voltage of silicon dioxide by asperities and at spherical electrodes

N. Klein, Olavi Nevanlinna · Solid-State Electronics · 1983 · 20 citations

Engineering, Materials Engineering, Materials Science +12