A novel partial SOI LDMOSFET with a trench and buried P layer for breakdown voltage improvement

High voltage thin layer devices (RESURF devices)

J.A. Appels, H.M.J. Vaes · 1979 · 517 citations

Electrical Engineering, Unusual Diode Structure, Engineering +12

Extension of RESURF principle to dielectrically isolated power devices

Yi-Fan Huang, B. Jayant Baliga · 2002 · 108 citations

Dielectrics, Engineering, Power Electronic Systems +17

A Novel 700-V SOI LDMOS With Double-Sided Trench

Xiaorong Luo, Bo Zhang, Zhaoji Li et al. · IEEE Electron Device Letters · 2007 · 105 citations

Electrical Engineering, Semiconductor Device, Engineering +12

New thin-film power MOSFETs with a buried oxide double step structure

Baoxing Duan, Bo Zhang, Zhaoji Li · IEEE Electron Device Letters · 2006 · 97 citations

Materials Science, Electrical Engineering, Engineering +13

Optimization of RESURF LDMOS transistors: an analytical approach

Arti Sharma Parpia, C.A.T. Salama · IEEE Transactions on Electron Devices · 1990 · 88 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +10