Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing

Abstract

We proposed an electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing process for SiO2/4H-SiC interface and investigated its effect on the electrical properties of the interface. The results indicate that this process could significantly reduce the density of interface traps (Dit) without degrading the oxide insulating properties. The best result is achieved for the 10-min annealed sample. The N and H, which are only concentrated at the SiO2/SiC interface, both play roles in reducing the Dit. N is more effective in passivating the shallow interface traps, while H is more effective in passivating the deep interface traps.