Qiaozhi Zhu

Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

Lingqin Huang, Bingbing Liu, Qiaozhi Zhu et al. · Applied Physics Letters · 2012 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

Lingqin Huang, Qiaozhi Zhu, Mingchao Gao et al. · Applied Surface Science · 2011 · 38 citations

Natural Sciences, Materials Science, Physics +13

Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x-ray photoelectron spectroscopy

Qiaozhi Zhu, Lingqin Huang, Wenbo Li et al. · Applied Physics Letters · 2011 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +15

Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing

Qiaozhi Zhu, Fuwen Qin, Wenbo Li et al. · Physica B Condensed Matter · 2013 · 27 citations

Engineering, Materials Engineering, Materials Science +17

Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing

Qiaozhi Zhu, Fuwen Qin, Wenbo Li et al. · Applied Physics Letters · 2013 · 23 citations

Engineering, Materials Engineering, Materials Science +16