Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 874 citations

Engineering, Electrical Engineering, Materials Science +17

High-power InGaN/GaN double-heterostructure violet light emitting diodes

Shuji Nakamura, Masayuki Senoh, Takashi Mukai · Applied Physics Letters · 1993 · 660 citations

Engineering, Electrical Engineering, Materials Science +16

Very low resistance multilayer Ohmic contact to <i>n</i>-GaN

Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations

Engineering, Materials Engineering, Materials Science +17

Low resistance ohmic contacts on wide band-gap GaN

Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations

Engineering, Materials Engineering, Materials Science +17

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

Engineering, Electrical Engineering, Materials Science +17