Ching-Ting Lee

GaN MOS device using SiO₂-Ga₂O₃ insulator grown by photoelectrochemical oxidation method

Ching-Ting Lee, Hsin-Ying Lee, Hongwei Chen · IEEE Electron Device Letters · 2003 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain

Chia-Ta Chang, Shih-Kuang Hsiao, Edward Yi Chang et al. · IEEE Electron Device Letters · 2009 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

RF and Logic Performance Improvement of $ \hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Composite-Channel HEMT Using Gate-Sinking Technology

Chien-I Kuo, Heng‐Tung Hsu, Edward Yi Chang et al. · IEEE Electron Device Letters · 2008 · 29 citations

Engineering, Electrical Engineering, Materials Science +8

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Yow-Jon Lin, Hsin-Ying Lee, Fu-Tsai Hwang et al. · Journal of Electronic Materials · 2001 · 28 citations

Engineering, Materials Engineering, Materials Science +14

ZnO-Based Solar Blind Ultraviolet-C Photodetectors Using SiZnO Absorption Layer

Ching-Ting Lee, Tzu-Shun Lin · IEEE Photonics Technology Letters · 2015 · 13 citations

Engineering, Materials Engineering, Materials Science +17