DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi et al. · Nature · 2004 · 7.4K citations

Engineering, Electrical Engineering, Materials Science +16

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Hisato Yabuta, Masafumi Sano, Katsumi Abe et al. · Applied Physics Letters · 2006 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

Hideo Hosono · Journal of Non-Crystalline Solids · 2006 · 902 citations

Engineering, Materials Engineering, Materials Science +17

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

Kenji Nomura, Akihiro Takagi, Toshio Kamiya et al. · Japanese Journal of Applied Physics · 2006 · 751 citations

Natural Sciences, Materials Engineering, Materials Science +17

Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

Akihiro Takagi, Kenji Nomura, Hiromichi Ohta et al. · Thin Solid Films · 2005 · 475 citations

Natural Sciences, Materials Science, Physics +16