Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs

D. E. Aspnes, J. P. Harbison, A. A. Studna et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1988 · 509 citations

Natural Sciences, Materials Science, Physics +17

Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum

Itaru Kamiya, D. E. Aspnes, L. T. Florez et al. · Physical review. B, Condensed matter · 1992 · 332 citations

Natural Sciences, Materials Science, Physics +12

Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence

D.H. Reep, S. K. Ghandhi · Journal of The Electrochemical Society · 1983 · 294 citations

Engineering, Materials Engineering, Materials Science +17

Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition

Itaru Kamiya, D. E. Aspnes, Hiroki Tanaka et al. · Physical Review Letters · 1992 · 213 citations

Natural Sciences, Chemistry, Materials Science +17

Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry

J.‐T. Zettler · Progress in Crystal Growth and Characterization of Materials · 1997 · 122 citations

Natural Sciences, Materials Engineering, Materials Science +14