A. Kaluza

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2

Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N2 and H2

M. Dauelsberg, H. Hardtdegen, L. Kadinski et al. · Journal of Crystal Growth · 2001 · 34 citations

Aluminium Nitride, Engineering, Carrier Gases N2 +5

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

K. Haberland, A. Kaluza, M. Zorn et al. · Journal of Crystal Growth · 2002 · 29 citations

Materials Science, Materials Engineering, Aluminium Nitride +11

Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure

Thomas Schäpers, A. Kaluza, K. Neuróhr et al. · Applied Physics Letters · 1997 · 28 citations

Superconducting Material, Engineering, Bismuth-based Superconductors +21

Current-injection in a ballistic multiterminal superconductor/two-dimensional electron gas Josephson junction

Thomas Schäpers, Vitaliy A. Guzenko, Robert Müller et al. · Physical review. B, Condensed matter · 2003 · 21 citations · Full text

Critical Currents, Hot Carrier Injection, Josephson Junctions +12