The use of organic As precursors in the low pressure MOCVD of GaAs

Mass Spectrometric Study of Ga (  CH 3 ) 3 and Ga (  C 2 H 5 )    3 Decomposition Reaction in  H 2 and  N 2

Masaji Yoshida, Hiroyuki Watanabe, Fumihiko Uesugi · Journal of The Electrochemical Society · 1985 · 210 citations

Natural Sciences, Biochemistry, Chemistry +15

A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

N. Pütz, H. Heinecke, M. Heyen et al. · Journal of Crystal Growth · 1986 · 178 citations

Natural Sciences, Materials Science, Physics +10

Use of tertiarybutylarsine for GaAs growth

C. H. Chen, C.A. Larsen, G. B. Stringfellow · Applied Physics Letters · 1987 · 128 citations

Engineering, Materials Engineering, Materials Science +17

A new approach to MOCVD of indium phosphide and gallium-indium arsenide

R.H. Moss, Julian Evans · Journal of Crystal Growth · 1981 · 120 citations

Engineering, Materials Engineering, Materials Science +14

Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

R. M. Lum, J. K. Klingert, M. G. Lamont · Applied Physics Letters · 1987 · 106 citations

Natural Sciences, Chemistry, Materials Science +17