R.H. Moss

A new approach to MOCVD of indium phosphide and gallium-indium arsenide

R.H. Moss, Julian Evans · Journal of Crystal Growth · 1981 · 120 citations

Gallium-indium Arsenide, Applied Physics, New Approach +5

Adducts in the growth of III–V compounds

R.H. Moss · Journal of Crystal Growth · 1984 · 86 citations

Inorganic Chemistry, Engineering, Organic Chemistry +5

The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

A.W. Nelson, P.C. Spurdens, Sandhya Cole et al. · Journal of Crystal Growth · 1988 · 34 citations

Materials Science, High Performance Inp, Electrical Engineering +9

Modified entrainment method for measuring vapour pressures and heterogeneous equilibrium constants. Part 2.—Equilibria in the water/gallium system

David Battat, M. M. Faktor, Ian Garrett et al. · Journal of the Chemical Society Faraday Transactions 1 Physical Chemistry in Condensed Phases · 1974 · 31 citations

Engineering, Experimental Thermodynamics, Chemistry +16

Modified entrainment method for measuring vapour pressures and heterogeneous equilibrium constants. Part 4.—The gallium arsenide/hydrogen chloride system

David Battat, M. M. Faktor, Ian Garrett et al. · Journal of the Chemical Society Faraday Transactions 1 Physical Chemistry in Condensed Phases · 1974 · 29 citations

Engineering, Gallium Species, Experimental Thermodynamics +20