Adducts in the growth of III–V compounds

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1980 · 332 citations

Semiconductors, N-type Inp, Optical Materials +14

Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow

B. Perrin · Journal de Physique Lettres · 1982 · 149 citations · Full text

Unsteady Flow, Environmental Fluid Dynamic, Engineering +15

Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference Holography

L.J. Giling · Journal of The Electrochemical Society · 1982 · 145 citations

Gas Flow Patterns, Engineering, Flow Control +18

Recollections and reflections of MO-CVD

H. M. Manasevit · Journal of Crystal Growth · 1981 · 139 citations

Computational Science, Engineering, Data Science +3

A new approach to MOCVD of indium phosphide and gallium-indium arsenide

R.H. Moss, Julian Evans · Journal of Crystal Growth · 1981 · 120 citations

Gallium-indium Arsenide, Applied Physics, New Approach +5