Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition

Abstract

The atomic layer deposition of alumina using water and trimethylaluminum is investigated using the density functional theory. The atomistic mechanisms of the two deposition half-cycles on Al–CH3* and Al–OH* surface sites are investigated. Both half-cycle reactions proceed through the formation of an Al–O Lewis acid-base complex followed by CH4 formation. The Al–O complexes are relatively stable, with formation energies between 0.57 and 0.74 eV. The CH4 formation activation energies range from 0.52 to 0.91 eV and both half-cycle reactions are exothermic with overall enthalpies of reaction between 1.30 and 1.70 eV.