Atomic Layer Deposition Interfaces
Atomic Layer Deposition Interfaces is a semiconductor interface phenomenon defined as the atomically precise boundary region formed between successive material layers during the sequential, self-limiting surface reactions characteristic of atomic layer deposition, distinguished by its controlled interfacial chemistry and minimal defect density arising from the layer-by-layer growth mechanism.
451
Publications
23.8K
Citations
2K
Authors
488
Institutions
Publications per year
2017–2026
149
Parents
451
GaAs interfacial self-cleaning by atomic layer deposition
Christopher L. Hinkle, Arif Sonnet, Eric M. Vogel et al. · Applied Physics Letters · 2008 · 382 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
1–5 of 451
2K
20
h-index
19
h-index
16
h-index
15
h-index
14
h-index
1–5 of 2K
488

University of Helsinki
Helsinki, Finland
22 h-index
100 publications
7.3K citations
University of Tartu
Tartu, Estonia
19 h-index
90 publications
4.4K citations
University of Colorado Boulder
Boulder, United States
18 h-index
68 publications
5.4K citations
Stanford University
Stanford, United States
16 h-index
82 publications
14.3K citations

Hanyang University
Seoul, South Korea
15 h-index
73 publications
1.7K citations

Uppsala University
Uppsala, Sweden
14 h-index
43 publications
2.5K citations
The University of Texas at Dallas
Richardson, United States
12 h-index
79 publications
6.9K citations

Chinese Academy of Sciences
Beijing, China
11 h-index
46 publications
1.8K citations
1–8 of 488
57 publications · 3K citations
31
h-index
54 publications · 1.7K citations
26
h-index
31 publications · 1.8K citations
19
h-index
17 publications · 477 citations
14
h-index
12 publications · 870 citations
11
h-index
1–5