Atomic Layer Deposition Interfaces

Atomic Layer Deposition Interfaces is a semiconductor interface phenomenon defined as the atomically precise boundary region formed between successive material layers during the sequential, self-limiting surface reactions characteristic of atomic layer deposition, distinguished by its controlled interfacial chemistry and minimal defect density arising from the layer-by-layer growth mechanism.

451

Publications

23.8K

Citations

2K

Authors

488

Institutions

Publications per year

2017–2026

149

Authors

2K

  1. MR
    Mikko Ritala

    University of Helsinki, Finland

    24 publications · 2.3K citations

    20

    h-index

  2. ML
    Markku Leskelä

    University of Helsinki, Finland

    20 publications · 2.1K citations

    19

    h-index

  3. SM
    Steven M. George

    University of Colorado Boulder, United States

    16 publications · 1.5K citations

    16

    h-index

  4. JA
    Jaan Aarik

    University of Tartu, Estonia

    16 publications · 920 citations

    15

    h-index

  5. KK
    Kaupo Kukli

    University of Helsinki, Finland

    15 publications · 651 citations

    14

    h-index

1–5 of 2K

Venues

  1. Thin Solid Films

    57 publications · 3K citations

    31

    h-index

  2. Applied Surface Science

    54 publications · 1.7K citations

    26

    h-index

  3. Applied Physics Letters

    31 publications · 1.8K citations

    19

    h-index

  4. Microelectronic Engineering

    17 publications · 477 citations

    14

    h-index

  5. Journal of Crystal Growth

    12 publications · 870 citations

    11

    h-index

1–5