Concepedia
Superlattices and Microstructures · 2012 · 19 citations · 16 references
Semiconductor TechnologyGate LengthElectrical EngineeringEngineeringApplied PhysicsBarrier ThicknessDg Mos-hfetSemiconductor Device
16
Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
C. Canali, G. Majni, R. Minder et al. · IEEE Transactions on Electron Devices · 1975 · 639 citations
Semiconductors, Semiconductor Technology, Electrical Engineering +13
Robust subthreshold logic for ultra-low power operation
H. Soeleman, Kaushik Roy, Bipul C. Paul · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2001 · 287 citations
Low-power Electronics, Hardware Security, Electrical Engineering +10
A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs
Qiang Chen, Bhavna Agrawal, J.D. Meindl · IEEE Transactions on Electron Devices · 2002 · 190 citations
Device Modeling, Scale Length, Electrical Engineering +14
Ultrafast operation of V/sub th/-adjusted p/sup +/-n/sup +/ double-gate SOI MOSFET's
Tetsu Tanaka, Ken Suzuki, Hiroshi Horie et al. · IEEE Electron Device Letters · 1994 · 76 citations
Electrical Engineering, Oscillator Delay Times, Vlsi Design +12
Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors
A. Kumar, J.K.O. Sin, C.T. Nguyen et al. · IEEE Transactions on Electron Devices · 1998 · 56 citations
Device Modeling, Electrical Engineering, Engineering +7