Sudhansu Kumar Pati

High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT

Sarosij Adak, Arghyadeep Sarkar, Sanjit K Swain et al. · Superlattices and Microstructures · 2014 · 47 citations

Electrical Engineering, Engineering, Applied Physics +4

Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs

Sanjit Kumar Swain, Arka Dutta, Sarosij Adak et al. · Microelectronics Reliability · 2016 · 41 citations

Electrical Engineering, High-k Oxide Thickness, Engineering +7

Influence of barrier thickness on AlInN/GaN underlap DG MOSFET device performance

Hemant Pardeshi, Godwin Raj, Sudhansu Kumar Pati et al. · Superlattices and Microstructures · 2013 · 34 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs

Sanjit Kumar Swain, Sarosij Adak, Sudhansu Kumar Pati et al. · Superlattices and Microstructures · 2016 · 26 citations

Materials Engineering, Aluminium Nitride, Electrical Engineering +6

Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

Sarosij Adak, Sanjit Kumar Swain, Avtar Singh et al. · Physica E Low-dimensional Systems and Nanostructures · 2014 · 24 citations

Electrical Engineering, Improved Breakdown Voltage, Engineering +5