Hemant Pardeshi

High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT

Sarosij Adak, Arghyadeep Sarkar, Sanjit K Swain et al. · Superlattices and Microstructures · 2014 · 47 citations

Electrical Engineering, Engineering, Applied Physics +4

Influence of barrier thickness on AlInN/GaN underlap DG MOSFET device performance

Hemant Pardeshi, Godwin Raj, Sudhansu Kumar Pati et al. · Superlattices and Microstructures · 2013 · 34 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Analog/RF performance of AlInN/GaN underlap DG MOS-HEMT

Hemant Pardeshi · Superlattices and Microstructures · 2015 · 25 citations

Electrical Engineering, Rf Semiconductor, Analog/rf Performance +1

Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

Sarosij Adak, Sanjit Kumar Swain, Avtar Singh et al. · Physica E Low-dimensional Systems and Nanostructures · 2014 · 24 citations

Electrical Engineering, Improved Breakdown Voltage, Engineering +5

Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency

Hemant Pardeshi, Godwin Raj, Sudhansu Kumar Pati et al. · Superlattices and Microstructures · 2013 · 22 citations

Carrier Transport Efficiency, Wide-bandgap Semiconductor, Electrical Engineering +8