Optical emission spectroscopy as the monitoring tool in ECR-MBE growth of GaN

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

R. C. Powell, N.-E. Lee, Y.-W. Kim et al. · Journal of Applied Physics · 1993 · 418 citations

Engineering, Materials Engineering, Materials Science +17

Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

M. Mizuta, Shinji Fujieda, Yoshishige Matsumoto et al. · Japanese Journal of Applied Physics · 1986 · 243 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 226 citations

Engineering, Materials Engineering, Materials Science +17

Growth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged species

R. J. Molnar, T. D. Moustakas · Journal of Applied Physics · 1994 · 130 citations

Engineering, Materials Engineering, Materials Science +16

Optical properties near the band gap on hexagonal and cubic GaN

Hajime Okumura, S. Yoshida, Takuji Okahisa · Applied Physics Letters · 1994 · 87 citations

Engineering, Materials Engineering, Materials Science +17