<title>Resist metrology for lithography simulation, part 2: development parameter measurements</title>

Abstract

Resist simulation technology began with the presentation of Dill's lithography models over 20 years ago, and in the ensuing years has undergone various improvements. Basic parameters in resist modeling include the exposure parameters, bulk development parameters, diffusion length of the photoactive compound (PAC) due to post-exposure baking (PEB), and surface inhibition factors. (The exposure parameters are discussed in detail in 'Resist Metrology for Lithography Simulation, Part 1.') In this report, equipment and data analysis software capable of efficient and accurate determination of development parameters, the diffusion lengths of PAC due to PEB, and surface inhibition factors are discussed. In particular, the construction of equipment for the measurement of development rates is described, and techniques for extraction of development parameters, PAC diffusion lengths, and surface inhibition factors are discussed in detail and examples are given for a high resolution i-line resist.