Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yong Cai, Yugang Zhou, Kei May Lau et al. · IEEE Transactions on Electron Devices · 2006 · 524 citations

Engineering, Electrical Engineering, Physics +17

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

Tohru OKA, Tomohiro Nozawa · IEEE Electron Device Letters · 2008 · 392 citations

Engineering, Electrical Engineering, Materials Science +17

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W. Lanford, Tsuyoshi Tanaka, Y. Otoki et al. · Electronics Letters · 2005 · 251 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance E-mode AlGaN/GaN HEMTs

Tomás Palacios, Chang Soo Suh, A. Chakraborty et al. · IEEE Electron Device Letters · 2006 · 195 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation

T. Mizutani, Masafumi Ito, Shigeru Kishimoto et al. · IEEE Electron Device Letters · 2007 · 153 citations · Full text

Engineering, Electrical Engineering, Materials Science +17