IEEE Journal of Solid-State Circuits · 1980 · 18 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignTiming AnalysisHigh PerformanceHigh-speed Cmos DesignPolysiliconSelf-aligned StructuresSignal Propagation Delay
An advanced method for polysilicon self-aligned (PSA) bipolar LSI technology has realized a miniaturized transistor for high performance. By introducing the overlapping structure for double poly-silicon electrodes, the emitter area is reduced to 1/spl mu/m X 3 /spl mu/m and the base junction is reduced to 0.3 /spl mu/m. The CML integrated circuit composed of this transistor has achieved a minimum propagation delay time of 0.29 ns/gate with power dissipation of 1.48 mW/gate. Compared to the conventional PSA method, this technology promises to fabricate higher speed and higher density LSI's.
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A high-speed 1600-gate bipolar LSI processor
Y. Akazawa, Hideo Kodama, T. Sudo et al. · 1978 · 17 citations
Engineering, Computer Engineering, Electrical Engineering +10
T. Sakai, Yoshio Sunohara, Hiroshi Nakamura et al. · 1977 · 15 citations
Engineering, Computer Engineering, Electrical Engineering +12
Koichi Okada, K. Aomura, J. Nokubo et al. · 1978 · 12 citations
Engineering, Computer Engineering, Electrical Engineering +13