Japanese Journal of Applied Physics · 2007 · 26 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsChemical Vapor DepositionEpitaxial GrowthIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresThin-film MaterialsAluminum Nitride DevicesAtomic Force Microscopy AnalysisBuffer LayersCathodoluminescence MicroscopyDevice FabricationHydride Vapor Phase EpitaxyMetalorganic Chemical Vapor DepositionMetalorganic Vapor Phase Epitaxy
We present a novel metalorganic hydride vapor phase epitaxy (MOHVPE) approach for lateral epitaxy of high-quality crack-free AlN layers over sapphire with thicknesses in excess of 20 µm. Feasibility of depositing thick AlN buffer layers and device quality AlxGa1-xN heterojunctions in a single chamber and growth run using metalorganic chemical vapor deposition and hydride vapor phase epitaxy growths either sequentially or simultaneously is demonstrated. Transmission electron microscopy, atomic force microscopy, and cathodoluminescence analyses confirm the viability of the MOHVPE grown layers for subsequent device fabrication.
10
Near-band-edge photoluminescence of wurtzite-type AlN
E. Kuokštis, Jianping Zhang, Q. Fareed et al. · Applied Physics Letters · 2002 · 107 citations