Applied Physics Letters · 2002 · 124 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLight SourcesLight-emitting DiodesLuminescent MaterialsFlip-chip Light-emitting DiodesPower SaturationSelf-heating EffectsSelf-heating ModelingTemperature Rise AnalysisThermal Effects In Photonic DevicesUltraviolet Light-emitting Diodes
We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70 °C at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement.
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High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations
Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Japanese Journal of Applied Physics · 2001 · 376 citations