Radiation-induced leakage currents in n-channel Silicon-on-sapphire MOST's

Abstract

This paper describes an experimental study of the source-to-drain leakage currents in silicon-on-sapphire n-channel MOS transistors before and after exposure to ionizing radiation. The leakage currents are studied as a function of device geometry and various processing parameters. The effects on the leakage currents of wet and dry gate oxidations, the transistor channel length, and optical (UV) bleaching are described. A model of hole traps in the Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> is proposed to explain the radiation-induced leakage currents.