Characterization of optical and electrical quality of Mg-doped InxGa1−xN grown by MOCVD

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations

Engineering, Materials Engineering, Materials Science +14

Optical and electrical properties of Mg-doped <i>p</i>-type AlxGa1−xN

J. Li, Tom Oder, M. L. Nakarmi et al. · Applied Physics Letters · 2002 · 161 citations

Natural Sciences, Materials Engineering, Materials Science +17

Mg-acceptor activation mechanism and transport characteristics in <i>p</i>-type InGaN grown by metalorganic vapor phase epitaxy

Kazuhide Kumakura, Toshiki Makimōto, Naoki Kobayashi · Journal of Applied Physics · 2003 · 135 citations

Engineering, Materials Engineering, Materials Science +17

Mechanisms of band-edge emission in Mg-doped <i>p</i>-type GaN

M. Smith, G. D. Chen, J. Y. Lin et al. · Applied Physics Letters · 1996 · 130 citations

Engineering, Materials Engineering, Materials Science +17

Determination of the critical layer thickness in the InGaN/GaN heterostructures

C. A. Parker, J. C. Roberts, S. M. Bedair et al. · Applied Physics Letters · 1999 · 117 citations

Engineering, Materials Engineering, Materials Science +17