Applied Physics Letters · 1997 · 40 citations · 13 references
Relaxation ProcessQuantum PhotonicsEngineeringPhotogenerated CarriersBand EdgeSemiconductorsQuantum MaterialsCompound SemiconductorSemiconductor TechnologyQuantum SciencePhotonicsPhotoluminescencePhysicsNon-linear OpticLow-temperature Grown GaasPotential FluctuationsApplied PhysicsCondensed Matter PhysicsQuantum Photonic DeviceOptoelectronicsUltrafast Relaxation Dynamics
We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 622 citations
Semiconductors, Output Resistance, Electrical Engineering +11
Photomixing up to 3.8 THz in low-temperature-grown GaAs
E. R. Brown, K. A. McIntosh, K. B. Nichols et al. · Applied Physics Letters · 1995 · 485 citations