K. B. Nichols

Photomixing up to 3.8 THz in low-temperature-grown GaAs

E. R. Brown, K. A. McIntosh, K. B. Nichols et al. · Applied Physics Letters · 1995 · 485 citations

Terahertz photomixing with diode lasers in low-temperature-grown GaAs

K. A. McIntosh, E. R. Brown, K. B. Nichols et al. · Applied Physics Letters · 1995 · 316 citations

Thz Photonics, Terahertz Technology, Optical Materials +20

9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates

K. Chu, P.C. Chao, M.T. Pizzella et al. · IEEE Electron Device Letters · 2004 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11

Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs

K. A. McIntosh, K. B. Nichols, S. Verghese et al. · Applied Physics Letters · 1997 · 85 citations

Semiconductors, Photonics, Ltg Gaas Grown +11

Milliwatt output levels and superquadratic bias dependence in a low-temperature-grown GaAs photomixer

E. R. Brown, K. A. McIntosh, F. W. Smith et al. · Applied Physics Letters · 1994 · 83 citations · Full text

Optical Materials, Engineering, Superquadratic Bias Dependence +18