IEEE Electron Device Letters · 1994 · 33 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsField-effect TransistorsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor Thin FilmsCurrent GainGainGain EnhancementHeterostructure Field-effect TransistorsHeterostructure Transistors
Heterostructure Emitter Bipolar Transistors (HEBT's) were fabricated with improved characteristics by employing the emitter edge-thinning technique. Optimum design for the n-GaAs emitter and the ledge thickness were used to remove the potential spike and to prevent ledge conduction simultaneously. Current gains as high as 720, which is the highest current gain ever reported for HEBT's, and offset voltages down to 70 mV were obtained. Very large improvement in current gain, especially at low collector current, was obtained by using the emitter edge-thinning technique.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Optimum emitter grading for heterojunction bipolar transistors
J. R. Hayes, Federico Capasso, R. J. Malik et al. · Applied Physics Letters · 1983 · 98 citations
An AlGaAs/GaAs heterostructure-emitter bipolar transistor
Xiaoxi Wu, Y.Q. Wang, L. F. Luo et al. · IEEE Electron Device Letters · 1990 · 41 citations