Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Shuji Nakamura · Science · 1998 · 1.9K citations

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Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

K. Pakuła, A. Wysmołek, K.P. Korona et al. · Solid State Communications · 1996 · 131 citations

Engineering, Materials Engineering, Materials Science +13

Band-gap narrowing and potential fluctuation in Si-doped GaN

In‐Hwan Lee, J. J. Lee, Patrick Kung et al. · Applied Physics Letters · 1999 · 95 citations

Engineering, Materials Engineering, Materials Science +17

Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

B. J. Skromme, J. Jayapalan, R. P. Vaudo et al. · Applied Physics Letters · 1999 · 70 citations

Engineering, Materials Engineering, Materials Science +17

Ionized donor bound excitons in GaN

Branko Šantić, C. J. Merz, U. Kaufmann et al. · Applied Physics Letters · 1997 · 65 citations

Engineering, Materials Engineering, Materials Science +17