Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy

Abstract

AlN/SiC epitaxial wafers were fabricated using hydride vapor phase epitaxy. The thickness of AlN layer was varied from 0.1 to 0.5 μm. Surface of AlN layers was characterized by high-energy electron diffraction and atomic force microscopy. The crystal structure of AlN layers was studied using X-ray diffraction. The minimum value of the full width at half maximum of ω-scan (0002) reflection rocking curve was about 120 arcsec. The specific resistivity of AlN was measured in the temperature range from 300 to 700 K.