The dependence of MOSFET surface carrier mobility on gate-oxide thickness

Abstract

It is shown that if the increment of surface potential above its value at the threshold voltage is not taken into consideration in the case of MOS transistors with very thin gate oxide, comparison of the classical description of the MOS transistor with experimental data leads to erroneous conclusions, e.g., that the effective channel carrier mobility depends on oxide thickness. It is shown by reanalysis of experimental data reported earlier in the literature that such a dependence can be only apparent.