IEEE Transactions on Electron Devices · 1989 · 24 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsSemiconductor HeterostructuresChannelsHigh-efficiency Power AmplifiersHigh-gain AmplifiersMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit AmplifiersPower DensityPower Density EnhancementPower Output
AlGaAs/InGaAs/GaAs-type heterostructure with one or two doped channels have been used to fabricate both discrete devices and monolithic amplifiers for millimeter-wave operation. Maximum current densities of 1 A/mm and maximum transconductances of 530 mS/mm were obtained. 0.25*50 mu m discrete devices delivered a power density of 1 W/mm with 2.9-dB gain and 25% efficiency at 60 GHz. A 100- mu m monolithic one-stage amplifier demonstrated 93 mW (0.93-W/mm power density) at 31.5 GHz with 4.2-dB gain and 29% efficiency. A record 34% efficiency was achieved with a 53.7-mW output power and 4.8-dB gain.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Advances in HEMT Technology and Applications
P.M. Smith, P.C. Chao, K.H.G. Dub et al. · 1987 · 58 citations
InGaAs pseudomorphic HEMTs for millimeter wave power applications
P.M. Smith, P.C. Chao, L. F. Lester et al. · 2003 · 40 citations